Morphological, chemical and electrical characterization of Pt-SnO2 thin film grown on rough and mechanically polished Al2O3 substrates

被引：13

作者：

Cricenti, A

Generosi, R

Scarselli, MA

Perfetti, P

Siciliano, P

Serra, A

Tepore, A

Coluzza, C

Almeida, J

Margaritondo, G

机构：

[1] IST STUDIO NUOVI MAT ELETTRON,I-73100 LECCE,ITALY

[2] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73110 LECCE,ITALY

[3] UNIV ROMA LA SAPIENZA,INFM,DIPARTIMENTO FIS,I-00186 ROME,ITALY

[4] ECOLE POLYTECH FED LAUSANNE,INST PHYS APPL,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1996年 / 29卷 / 09期

关键词：

D O I：

10.1088/0022-3727/29/9/003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface chemical composition and topography of Pt-SnO2 thin films grown by radiofrequency (rf) reactive sputtering on two different Al2O3 substrates (rough and mechanically polished) were investigated by x-ray photoemission spectromicroscopy (XPSM) and atomic force microscopy (AFM). XPSM measurements showed, for both substrates, a homogeneous chemical composition of the Pt-SnO2 films. The only difference was the observation of different charging in different areas of the film grown on rough alumina substrates, due, presumably, to a non-continuous Pt-SnO2 film. AFM showed large topographical variations (several hundred nanometres) for the Pt-SnO2 film grown on a rough alumina substrate, due to structures already present on the substrate. The estimated roughness of the sensor was 20% larger for the Pt-SnO2 film grown on a rough alumina substrate. The response to carbon monoxide was 30% higher for the sensor grown on rough alumina than that on polished alumina, reflecting the larger exposed sensor area.

引用

页码：2235 / 2239

页数：5

共 19 条

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