Design of a SiGe-Si quantum-well optical modulator

被引：42

作者：

Marris, D ^{[1
]}

Cordat, A ^{[1
]}

Pascal, D ^{[1
]}

Koster, A ^{[1
]}

Cassan, E ^{[1
]}

Vivien, L ^{[1
]}

Laval, S ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, F-91405 Orsay, France

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2003年 / 9卷 / 03期

关键词：

design of experiment; optical modulation; SiGe; silicon-on-insulator (SOI);

D O I：

10.1109/JSTQE.2003.820404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A light modulator consisting of modulation-doped SiGe-Si multiple quantum wells integrated in a silicon-on-insulator waveguide is designed. The device is based on the electrorefractive effect due to the variation of holes density in the SiGe wells, induced by applying a reverse bias on a PIN diode. This mechanism is simulated by numerical calculations of the hole distribution coupled with the optical guided mode propagation characteristics. The mode effective index variation of TE-polarized light at the 1.31-mum wavelength can then be obtained as a function of the applied bias. The influences of the structure parameters such as the thickness and the doping level of the doped barrier layers or the number of SiGe wells is analyzed thanks to a design of experiment method. The optimization gives an effective index variation of 2.10(-4) for an applied bias voltage of 6 V. To obtain optical intensity modulation, this structure has to be included in a Fabry-Perot cavity. The modulation performances are analyzed.

引用

页码：747 / 754

页数：8

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