Preparation and thermophysical properties of AgGaTe2 crystals

被引:15
作者
Burger, A [1 ]
Ndap, JO
Cui, Y
Roy, U
Morgan, S
Chattopadhyay, K
Ma, X
Faris, K
Thibaud, S
Miles, R
Mateen, H
Goldstein, JT
Rawn, CJ
机构
[1] Fisk Univ, Ctr Photon Mat & Devices, Dept Phys, Nashville, TN 37208 USA
[2] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
[3] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
关键词
X-ray diffraction; non-linear optical materials; semiconducting materials;
D O I
10.1016/S0022-0248(01)00957-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The preparation and thermophysical properties of AgGaTe2 crystals are reported. The synthesis from pure elements was performed in a rocking oven and scanning electron microscopy and energy dispersive X-ray elemental analysis show the presence of additional phases. From simultaneous differential calorimetry and thermogravimetric analysis (SDT) measurements we have found that AgGaTe2 melts at 725.7 degreesC, with a heat of fusion of 104.8J/g(-1). High temperature powder X-ray diffraction data confirmed the chalcopyrite structure and yielded the thermal expansion coefficients along the a- and c-axes to 500 degreesC. Heating above that temperature, under inert gas flow, causes the material to sublime incongruently and produce a film of gallium rich surface. Experimental values of thermal diffusivity and estimates of the thermal conductivity values are also presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:505 / 511
页数:7
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