A 64Mbit embedded FeRAM utilizing a 130nm, 5LM Cu/FSG logic process

被引：14

作者：

McAdams, H ^{[1
]}

Acklin, R ^{[1
]}

Blake, T ^{[1
]}

Fong, J ^{[1
]}

Liu, D ^{[1
]}

Madan, S ^{[1
]}

Moise, T ^{[1
]}

Natarajan, S ^{[1
]}

Qian, N ^{[1
]}

Qui, Y ^{[1
]}

Roscher, J ^{[1
]}

Seshadri, A ^{[1
]}

Summerfelt, S ^{[1
]}

Du, X ^{[1
]}

Eliason, J ^{[1
]}

Kraus, W ^{[1
]}

Lanham, R ^{[1
]}

Li, F ^{[1
]}

Pietrzyk, C ^{[1
]}

Rickes, J ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

2003 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2003年

关键词：

FRAM; eFRAM; ferroelectric; 1T1C;

D O I：

10.1109/VLSIC.2003.1221194

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A low-voltage (1.3V), 64Mbit Ferroelectric Random Access Memory using a 1-transistor, 1-capacitor (1T1C) cell is demonstrated. This is the largest FRAM memory demonstrated to date. The memory is constructed using a state-of-the-art 130nm transistor and a five-level Cu/FSG interconnect process. Only two additional masks are required for integration of the ferroelectric module into a single-gate oxide, low-voltage logic process. Address access time for the memory is less than 30ns while consuming 0.57mW/MHz at 1.37V. An eFRAM density of 1.13 Mb/mm(2) is achieved with a cell size of 0.54um(2) and capacitor size of 0.25um(2).

引用

页码：175 / 176

页数：2

共 4 条

[1]

Moise T. S., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P940, DOI 10.1109/IEDM.1999.824305

[2]

Moise TS, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P535, DOI 10.1109/IEDM.2002.1175897

[3]

Rickes JT, 2002, INTEGR FERROELECTR, V48, P109, DOI [10.1080/10584580290171522, 10.1080/10584590290171522]

[4] Demonstration of scaled (≥0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect [J].

Summerfelt, SR ;

Moise, TS ;

Xing, G ;

Colombo, L ;

Sakoda, T ;

Gilbert, SR ;

Loke, ALS ;

Ma, S ;

Wills, LA ;

Kavari, R ;

Hsu, T ;

Amano, J ;

Johnson, ST ;

Vestcyk, DJ ;

Russell, MW ;

Bilodeau, SM ;

van Buskirk, P .

APPLIED PHYSICS LETTERS, 2001, 79 (24) :4004-4006

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