Thin-film trilayer manganate junctions

被引：36

作者：

Sun, JZ ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 1998年 / 356卷 / 1742期

关键词：

manganite; low-field magnetoresistance; trilayer functions; spin-dependent transport; tunnelling;

D O I：

10.1098/rsta.1998.0242

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La0.67Sr0.33MnO3-SrTiO3-La0.67Sr0.33 MnO3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2 K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

引用

页码：1693 / 1711

页数：19

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