Anisotropy and thermopower in Ti3SiC2 -: art. no. 121104

被引:44
作者
Chaput, L
Hug, G
Pécheur, P
Scherrer, H
机构
[1] ENSMN, UMR 75560, Phys Mat Lab, F-54042 Nancy, France
[2] CNRS, ONERA, Lab Etud Microstruct, F-92322 Chatillon, France
关键词
D O I
10.1103/PhysRevB.71.121104
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Seebeck coefficient of the Ti3SiC2 compound has recently been measured and found to be constant and negligible over a wide range of temperature. Materials with essentially zero thermopower allow us to measure the absolute thermopower of another material and could therefore be considered as reference material in thermoelectric measurements. In this paper we analyze the origin of this unusual behavior. The thermopower is calculated from ab initio electronic structure in the framework of Boltzmann transport theory. Under the Mott approximation for the relaxation time, we found the thermopower negative along the z axis and positive in the basal plane. The very small value which is experimentally observed can be ascribed to a compensation between the nonequivalent crystallographic axes.
引用
收藏
页数:3
相关论文
共 11 条
[1]   Electrical conductivity, thermopower, and hall effect of Ti3AIC2, Ti4AIN3, and Ti3SiC2 [J].
Barsoum, MW ;
Yoo, HI ;
Polushina, IK ;
Rud, VY ;
Rud, YV ;
El-Raghy, T .
PHYSICAL REVIEW B, 2000, 62 (15) :10194-10198
[2]  
Blaha P., 2001, WIEN2k, An Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties
[3]   Electronic, thermal, and elastic properties of Ti3Si1-xGexC2 solid solutions -: art. no. 085104 [J].
Finkel, P ;
Seaman, B ;
Harrell, K ;
Palma, J ;
Hettinger, JD ;
Lofland, SE ;
Ganguly, A ;
Barsoum, MW ;
Sun, Z ;
Li, S ;
Ahuja, R .
PHYSICAL REVIEW B, 2004, 70 (08) :085104-1
[4]   Low-temperature transport properties of nanolaminates Ti3AlC2 and Ti4AlN3 -: art. no. 235108 [J].
Finkel, P ;
Barsoum, MW ;
Hettinger, JD ;
Lofland, SE ;
Yoo, HI .
PHYSICAL REVIEW B, 2003, 67 (23)
[5]   Magnetotransport properties of the ternary carbide Ti3SiC2:: Hall effect, magnetoresistance, and magnetic susceptibility -: art. no. 035113 [J].
Finkel, P ;
Hettinger, JD ;
Lofland, SE ;
Barsoum, MW ;
El-Raghy, T .
PHYSICAL REVIEW B, 2002, 65 (03) :1-4
[6]   Electronic properties of Ti3SiC2-based solid solutions [J].
Medvedeva, NI ;
Novikov, DL ;
Ivanovsky, AL ;
Kuznetsov, MV ;
Freeman, AJ .
PHYSICAL REVIEW B, 1998, 58 (24) :16042-16050
[7]  
Mott N. F., 1958, THEORY PROPERTIES ME
[8]  
Perdew JP, 1997, PHYS REV LETT, V78, P1396, DOI 10.1103/PhysRevLett.77.3865
[9]   Ab initio calculation of titanium silicon carbide [J].
Sun, ZM ;
Zhou, YC .
PHYSICAL REVIEW B, 1999, 60 (03) :1441-1443
[10]   Thermoelectric properties of Sb2Te3 under pressure and uniaxial stress -: art. no. 085201 [J].
Thonhauser, T ;
Scheidemantel, TJ ;
Sofo, JO ;
Badding, JV ;
Mahan, GD .
PHYSICAL REVIEW B, 2003, 68 (08)