Preparation and characterization of Ti/Diamond electrodes

被引:51
作者
Fisher, V
Gandini, D
Laufer, S
Blank, E
Comninellis, C [1 ]
机构
[1] Swiss Fed Inst Technol, Inst Chem Engn, CH-1015 Lausanne, Switzerland
[2] Swiss Fed Inst Technol, Dept Mat, Met Phys Lab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1016/S0013-4686(98)00116-9
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Boron doped diamond films have been deposited on Ti substrates by CVD. Raman spectroscopy reveals the presence of small amounts of nondiamond carbon. According to SEM;ind XRD, the diamond Rims polycrystalline with preferential [112] crystallite orientation. Electrochemical measurements show that Fe(CN)(6)(3-/4-) couple behaves in a quasi-reversible manner at the Ti/Diamond electrode. The main reason of the successful preparation of the Ti/Diamond electrode is the formation of an conductive TIC interlayer between the Ti substrate and the diamond coating. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
引用
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页码:521 / 524
页数:4
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