Effects of Self-Assembled Monolayers on Solid-State CdS Quantum Dot Sensitized Solar Cells

被引:97
作者
Ardalan, Pendar [1 ]
Brennan, Thomas P. [1 ]
Lee, Han-Bo-Ram [1 ]
Bakke, Jonathan R. [1 ]
Ding, I-Kang [1 ]
McGehee, Michael D. [2 ]
Bent, Stacey F. [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
quantum dot sensitized solar cells; self-assembled monolayers; successive ionic layer adsorption and reaction; cadmium sulfide; titanium dioxide; nanostructure; TIO2; FILMS; THIN-FILMS; SIZED CDS; NANOCRYSTALS; DEPOSITION; ARCHITECTURES; ELECTRODES; CONVERSION; PARTICLES; MECHANISM;
D O I
10.1021/nn103371v
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Quantum dot sensitized solar cells (QDSSCs) are of interest for solar energy conversion because of their tunable band gap and promise of stable, low-cost performance. We have investigated the effects of self-assembled monolayers (SAMs) with phosphonic acid headgroups on the bonding and performance of cadmium sulfide (CdS) solid-state QDSSCs. CdS quantum dots similar to 2 to similar to 6 nm in diameter were grown on SAM-passivated planar or nanostructured TIO2 surfaces by successive ionic layer adsorption and reaction (SILAR), and photovoltaic devices were fabricated with spiro-OMeTAD as the solid-state hole conductor. X-ray photoelectron spectroscopy, Auger electron spectroscopy, ultraviolet-visible spectroscopy, scanning electron microscopy, transmission electron microscopy, water contact angle measurements, ellipsometry, and electrical measurements were employed to characterize the materials and the resulting device performance. The data indicate that the nature of the SAM tailgroup does not significantly affect the uptake of CdS quantum dots on 1102 nor their optical properties, but the presence of the SAM does have a significant effect on the photovoltaic device performance. Interestingly, we observe up to similar to 3 times higher power conversion efficiencies in devices with a SAM compared to those without the SAM.
引用
收藏
页码:1495 / 1504
页数:10
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