Band structure of β-HgS from Shubnikov-de Haas effect

被引：30

作者：

Dybko, K ^{[1
]}

Szuszkiewicz, W ^{[1
]}

Dynowska, E ^{[1
]}

Paszkowicz, W ^{[1
]}

Witkowska, B ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA B-CONDENSED MATTER | 1998年 / 256卷

关键词：

II-VI compounds; quantum transport; band structure; transition metals;

D O I：

10.1016/S0921-4526(98)00498-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The Shubnikov-de Haas oscillations were measured in zinc-blende Hg0.98TM0.02S (TM = Co, Mn, Fe) at temperatures ranging from 1.6 to 30 K, in magnetic fields up to 13 T. From standard harmonic analysis the values of the effective masses at the Fermi level versus electron concentration were determined. The analysis of this dependence within the frame of Kane model for narrow-band semiconductors yielded a low temperature value for energy gap E-0 = -0.110 eV +/- 0.040 eV and momentum matrix element P = 7.1 x 10(-8) eV cm +/- 0.2 x 10(-8) eV cm. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：629 / 632

页数：4

共 8 条

[1]

DOBROWOLSKI W, 1987, P 18 INT C PHYS SEM, P1743

[2]

Dybko K., 1995, DEFECT DIFFUS FORUM, V121

[3]

Kane E.., 1966, SEMICONDUCTORS SEMIM, V1, P75

[4]

Kossut J., 1993, HDB MAGN MAT, V7, P231