Strong energy dependence of the electron-phonon coupling strength on Bi(100)

被引：67

作者：

Gayone, JE ^{[1
]}

Hoffmann, SV ^{[1
]}

Li, Z ^{[1
]}

Hofmann, P ^{[1
]}

机构：

[1] Univ Aarhus, Inst Storage Ring Facil, DK-8000 Aarhus C, Denmark

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.91.127601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the energy dependence of the electron-phonon coupling strength on Bi(100). A fit of the temperature-dependent surface state linewidth results in a change of the coupling parameter lambda from 0.20+/-0.02 to 0.72+/-0.05 as the binding energy of the surface state increases from 70 to 330 meV. This result cannot be reconciled with the usual interpretation of lambda as the electron-phonon mass enhancement parameter at the Fermi energy. We suggest that this behavior is mainly caused by the strong energy dependence of the bulk density of states in this region.

引用

页数：4

共 24 条

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