Surface characterization of oriented silver films on Si (100) substrates using scanning tunnelling microscopy

被引：5

作者：

Ali, AO ^{[1
]}

Kshirsagar, RB ^{[1
]}

Dharmadhikari, CV ^{[1
]}

机构：

[1] Univ Pune, Dept Phys, Ctr Adv Studies Mat Sci & Solid State Phys, Poona 411007, Maharashtra, India

来源：

THIN SOLID FILMS | 1998年 / 323卷 / 1-2期

关键词：

oriented silver films; Si (100) substrates; scanning tunnelling microscopy;

D O I：

10.1016/S0040-6090(97)01042-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The morphology of silver films grown at 300 degrees C in high vacuum have been characterized. The films consist of highly ordered (100) oriented grains exhibiting large flat terraces with array of parallel steps. The surface roughness of the individual grains was characterized by scanning tunnelling microscopy (STM) in terms of height histograms and height-height correlations. The results are discussed in the context of applications of these films as templates for the investigation of complex molecules. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：105 / 109

页数：5

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