Mott localization in 1T-TaSxSe2-X investigated by cryogenic STM/STS at 77 K

被引：4

作者：

Shiino, O

Endo, T

Yamaguchi, W

Sugawara, H

Hasegawa, T

Kitazawa, K

机构：

[1] Dept. of Superconductivity, University of Tokyo, Bunkyo-Ku, Tokyo 113, 7-3-1, Hongo

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1996年 / 46卷

关键词：

D O I：

10.1007/BF02570297

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mott transition in the solid solution of 1T-TaSxSe2-x was investigated by the scanning tunneling microscopy/ spectroscopy (STM/STS) at 77 K. For x>1.5, a clear Mott-Hubbard gap structure of similar to 0.5 eV, accompanied with two conductance peaks was observed. In TaS1.2Se0.8, on the other hand, it was found that the gap structure was collapsed. The x dependence of the tunneling spectrum is consistent with time Mott transition picture where time density of states near the Fermi level goes to zero with increasing x.

引用

页码：2621 / 2622

页数：2

共 5 条

[1] 2 TYPES OF MOTT TRANSITIONS [J].