Charge Transport in Self-Assembled Semiconducting Organic Layers: Role of Dynamic and Static Disorder

被引:46
作者
Vehoff, Thorsten [1 ]
Chung, Yeon Sook [2 ]
Johnston, Karen [1 ]
Troisi, Alessandro [3 ,4 ]
Yoon, Do Y. [2 ]
Andrienko, Denis [1 ]
机构
[1] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
[2] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea
[3] Univ Warwick, Dept Chem, Coventry CV4 7AL, W Midlands, England
[4] Univ Warwick, Ctr Comp Sci, Coventry CV4 7AL, W Midlands, England
基金
英国工程与自然科学研究理事会;
关键词
ELECTRONIC TRANSPORT; MOLECULAR-CRYSTALS; HIGH-PERFORMANCE; BAND-STRUCTURE; MOBILITY; FIELD; MORPHOLOGY;
D O I
10.1021/jp101738g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Partial disorder is an inherent property of self-assembled organic semiconductors that complicates their rational design, because electronic structure, self-assembling properties, and stability all have to be accounted for simultaneously. Therefore, the understanding of charge transport mechanisms in these systems is still in its infancy. A theoretical study of charge transport in organic semiconductors was performed on self-assembled layers of [1]benzothieno[3,2-b]benzothiophene functionalized with alkyl side chains. Analysis showed that semiclassical dynamics misses static (on time scales of charge transport) disorder while the solution of the master equation combined with the high-temperature limit Marcus theory for charge transfer rates does not take into account molecular dynamic modes relaxing on a time scale of charge hopping. A comparison between predictions based on a perfectly ordered and a realistic crystal structure reveals the strong influence of static and dynamic disorder. The advantage of two-dimensional charge transporting materials over one-dimensional ones is clearly shown. The Marcus theory-based prediction of 0.1 cm(2) V-1 s(-1) is in good agreement with our FET mobility of 0.22 cm(2) V-1 s(-1), which is an order of magnitude lower than that reported in the literature [Ebata, H.; et al. J. Ant. Chem. Soc. 2007, 129, 15732].
引用
收藏
页码:10592 / 10597
页数:6
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