Uniform hexagonal graphene flakes and films grown on liquid copper surface

被引:400
作者
Geng, Dechao [1 ]
Wu, Bin [1 ]
Guo, Yunlong [1 ]
Huang, Liping [1 ]
Xue, Yunzhou [1 ]
Chen, Jianyi [1 ]
Yu, Gui [1 ]
Jiang, Lang [1 ]
Hu, Wenping [1 ]
Liu, Yunqi [1 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Key Lab Organ Solids, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
atomic crystal; electronic materials; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; EPITAXIAL GRAPHENE; BILAYER GRAPHENE; TRANSISTORS;
D O I
10.1073/pnas.1200339109
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Unresolved problems associated with the production of graphene materials include the need for greater control over layer number, crystallinity, size, edge structure and spatial orientation, and a better understanding of the underlying mechanisms. Here we report a chemical vapor deposition approach that allows the direct synthesis of uniform single-layered, large-size (up to 10,000 mu m(2)), spatially self-aligned, and single-crystalline hexagonal graphene flakes (HGFs) and their continuous films on liquid Cu surfaces. Employing a liquid Cu surface completely eliminates the grain boundaries in solid polycrystalline Cu, resulting in a uniform nucleation distribution and low graphene nucleation density, but also enables self-assembly of HGFs into compact and ordered structures. These HGFs show an average two-dimensional resistivity of 609 +/- 200 Omega and saturation current density of 0.96 +/- 0.15 mA/mu m, demonstrating their good conductivity and capability for carrying high current density.
引用
收藏
页码:7992 / 7996
页数:5
相关论文
共 32 条
[1]   Growth of large-area graphene films from metal-carbon melts [J].
Amini, Shaahin ;
Garay, Javier ;
Liu, Guanxiong ;
Balandin, Alexander A. ;
Abbaschian, Reza .
JOURNAL OF APPLIED PHYSICS, 2010, 108 (09)
[2]  
Bae S, 2010, NAT NANOTECHNOL, V5, P574, DOI [10.1038/nnano.2010.132, 10.1038/NNANO.2010.132]
[3]   Top-Gated Chemical Vapor Deposition Grown Graphene Transistors with Current Saturation [J].
Bai, Jingwei ;
Liao, Lei ;
Zhou, Hailong ;
Cheng, Rui ;
Liu, Lixin ;
Huang, Yu ;
Duan, Xiangfeng .
NANO LETTERS, 2011, 11 (06) :2555-2559
[4]   Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].
Bhaviripudi, Sreekar ;
Jia, Xiaoting ;
Dresselhaus, Mildred S. ;
Kong, Jing .
NANO LETTERS, 2010, 10 (10) :4128-4133
[5]   Epitaxial Graphene on Cu(111) [J].
Gao, Li ;
Guest, Jeffrey R. ;
Guisinger, Nathan P. .
NANO LETTERS, 2010, 10 (09) :3512-3516
[6]   Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition [J].
Gao, Libo ;
Ren, Wencai ;
Zhao, Jinping ;
Ma, Lai-Peng ;
Chen, Zongping ;
Cheng, Hui-Ming .
APPLIED PHYSICS LETTERS, 2010, 97 (18)
[7]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191
[8]   Graphene: Status and Prospects [J].
Geim, A. K. .
SCIENCE, 2009, 324 (5934) :1530-1534
[9]   Raman scattering from high-frequency phonons in supported n-graphene layer films [J].
Gupta, A. ;
Chen, G. ;
Joshi, P. ;
Tadigadapa, S. ;
Eklund, P. C. .
NANO LETTERS, 2006, 6 (12) :2667-2673
[10]   Grains and grain boundaries in single-layer graphene atomic patchwork quilts [J].
Huang, Pinshane Y. ;
Ruiz-Vargas, Carlos S. ;
van der Zande, Arend M. ;
Whitney, William S. ;
Levendorf, Mark P. ;
Kevek, Joshua W. ;
Garg, Shivank ;
Alden, Jonathan S. ;
Hustedt, Caleb J. ;
Zhu, Ye ;
Park, Jiwoong ;
McEuen, Paul L. ;
Muller, David A. .
NATURE, 2011, 469 (7330) :389-+