Experimental results from a microdot detector overcoated with a semiconducting layer

被引：13

作者：

Biagi, SF

Duxbury, D

Gabathuler, E

机构：

[1] Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England

[2] Royal Marsden Hosp, Joint Dept Phys, Sutton SM2 5PT, Surrey, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 419卷 / 2-3期

关键词：

D O I：

10.1016/S0168-9002(98)00818-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A Microdot (MDOT) detector has been overcoated with a boron-doped amorphous silicon carbide semiconductive layer. The stable operation of the device in mixtures of argon, neon and helium with di methyl ether (DME) at high gains and at high counting rates is shown. Radiation damage tests give a lifetime of over 120 mC/cm using a gas system with plastic gas pipes. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：438 / 443

页数：6

共 7 条

[1]

BIAGI S, COMMUNICATION

[2] Further experimental results of gas microdot detectors [J].