A 100W S-Band AlGaAs/GaAs hetero-structure FET for base stations of wireless personal communications.

被引：5

作者：

Goto, S ^{[1
]}

Fujii, K ^{[1
]}

Morishige, H ^{[1
]}

Suzuki, S ^{[1
]}

Sakamoto, S ^{[1
]}

Yoshida, N ^{[1
]}

Tanino, N ^{[1
]}

Sato, K ^{[1
]}

机构：

[1] Mitsubishi Elect Co, High Frequency & Opt Semicond Div, Itami, Hyogo 664, Japan

来源：

GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998 | 1998年

关键词：

D O I：

10.1109/GAAS.1998.722632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 100W low distortion AlGaAs/GaAs hetero-structure FET, which is the smallest package size ever reported, has been developed for TDMA and CDMA cellular base stations. The FET exhibited 100W (50 dBm) saturation output power, and 11.5dB power gain at 1dB gain compression at 2.1GHz, The third order inter-modulation distortion (IMD3) and the power added efficiency (PAE) under two-tone test condition (Delta f=1MHz) were -35 dBc and 24%, respectively at 42 dBm output power, of which level was 8 dB back-off from saturation power. To reduce the cost and the space, the size of the chip and the package were miniaturized to 1.41 x 2.6 mm(2) and 17.4 x 24.0 mm(2), respectively by lengthening the gate finger.

引用

页码：77 / 80

页数：4