Nucleation kinetics on inhomogeneous substrates: Al/Au(111)

被引：50

作者：

Fischer, B ^{[1
]}

Brune, H ^{[1
]}

Barth, JV ^{[1
]}

Fricke, A ^{[1
]}

Kern, K ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Phys Expt, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.82.1732

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a quantitative atomic scale study of nucleation kinetics on an inhomogeneous substrate. Our model system, Al/Au(111)-(root 3 x 22), reveals a distinct nucleation transition due to the repulsive nature of surface dislocations. Whereas for T < 200 K Al adatoms are confined to quasipseudomorphic stacking areas experiencing a very small diffusion barrier (30 +/- 5 meV), at T > 200 K surface dislocations, representing repulsive barriers of Delta E approximate to 560 meV, can be surmounted. The results illustrate the significance of surface dislocations as repulsive line defects in nucleation and growth.

引用

页码：1732 / 1735

页数：4

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