Practical Si LED's with standard CMOS technology

被引：9

作者：

Snyman, LW ^{[1
]}

Biber, A ^{[1
]}

Aharoni, H ^{[1
]}

du Plessis, M ^{[1
]}

Patterson, BD ^{[1
]}

Seitz, P ^{[1
]}

机构：

[1] Univ Pretoria, Dept Elect & Elect Engn, Carl & Emily Fuchs Inst Microelect, ZA-0002 Pretoria, South Africa

来源：

PROCEEDINGS IEEE SOUTHEASTCON '98: ENGINEERING FOR A NEW ERA | 1998年

关键词：

D O I：

10.1109/SECON.1998.673367

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multi-junction silicon light emitting devices (Si LED's) were designed and realised by using standard 1.2 micron and 2 micron CMOS processes with a bipolar capability and with no modifications to the processes. The designs were optimised to increase the power conversion efficiency, quantum conversion efficiency, intensity of emission and also the uniformity of emission. The devices emit light of several nW per 5 to 10 mA at 4 - 30V in the 450 to 850 nm wavelength range. All the devices operated with at least one pn junction in the field emission or avalanche breakdown mode. Quantum conversion efficiencies of up to 1.5x10(-5) have been measured which is two and a half orders to three orders of magnitude higher than previously published values for light emission from Si p-n avalanching junctions. Some directional light emission characteristics were also observed. The developed devices are viable for on-chip electro-optical applications and also for high speed chip-to-environment electro-optical applications.

引用

页码：344 / 347

页数：4