The characterization of silicon nitride films by contactless transient photoconductivity measurements

被引：4

作者：

Kunst, M ^{[1
]}

Abdallah, O ^{[1
]}

Wünsch, F ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Sect SE, D-14109 Berlin, Germany

来源：

THIN SOLID FILMS | 2001年 / 383卷 / 1-2期

关键词：

passivation; silicon; antireflection coatings;

D O I：

10.1016/S0040-6090(00)01784-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is shown by non-invasive photoconductivity measurements that the coating of Si wafers by silicon nitride films leads to the increase of number of excess charge carriers generated in the silicon substrate by visible light due to the antireflection properties of the films. The silicon surface is electrically passivated by the deposition of these films on top of it. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：61 / 64

页数：4

共 3 条

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