Electronic structure of WSe2: A combined photoemission and inverse photoemission study

被引：76

作者：

Traving, M

Boehme, M

Kipp, L

Skibowski, M

Starrost, F

Krasovskii, EE

Perlov, A

Schattke, W

机构：

[1] CHRISTIAN ALBRECHTS UNIV KIEL,INST THEORET PHYS,D-24098 KIEL,GERMANY

[2] UKRAINIAN ACAD SCI,INST PHYS MET,UA-252180 KIEV 142,UKRAINE

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.55.10392

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a complete determination of the experimental and theoretical valence- and conduction-band structure of WSe2. The results of combined angle-resolved photoemission and inverse photoemission are discussed in the context of fully relativistic linear-muffin-tin-orbital and extended linear-augmented-planewave calculations. We measure an indirect band gap of 1.2 eV, and find the valence-band maximum to be located at the center of the Brillouin zone and the conduction-band minimum at 0.55 Gamma K.

引用

页码：10392 / 10399

页数：8

共 21 条

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