Properties of vacancies in silicon determined by out-diffusion of zinc from silicon

被引：2

作者：

Giese, A ^{[1
]}

Bracht, H ^{[1
]}

Walton, JT ^{[1
]}

Stolwijk, NA ^{[1
]}

机构：

[1] Univ Munster, Inst Met Forsch, D-48149 Munster, Germany

来源：

SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING | 1998年 / 532卷

关键词：

D O I：

10.1557/PROC-532-219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present out-diffusion of Zn in Si as a new method to study properties of Si vacancies. Out-diffusion experiments were performed on homogeneously Zn-doped Si samples at 1107 degrees C and 1154 degrees C. The resulting concentration-depth profiles were measured by means of spreading-resistance profiling. Based on a diffusion model in which Zn migrates simultaneously via the kick-out and the dissociative mechanism all experimental profiles were modeled by computer simulations. The calculations reveal that out-diffusion of Zn from Si occurs to a considerable extent via the dissociative mechanism. Hence, vacancy properties like the equilibrium concentration C-V(eq) and the transport capacity (CVDV)-D-eq can be extracted from profile fittings. The results are compared with literature data deduced from in-diffusion experiments.

引用

页码：219 / 224

页数：6