Preparation of ferroelectric Pb(Zr1-xTix)O3/Si films by laser lift-off technique

Materials characteristics and ferroelectric properties of thick xPb(Ni1/3Nb2/3)O-3-(1-x)Pb(Zr0.52Ti0.48)O-3 (x=0.3), PNN-PZT films, which were prepared by doctor-blade tape-casting and laser lift-off processes, were investigated. The underlying buffer materials were observed to influence significantly the densification behavior for the PNN-PZT sapphire layers. For PNN-PZT/ sapphire films sintered without buffer layer, the substrates impose pronounced constraint on materials shrinkage, inducing the formation of porosity for the PNN-PZT layers. The proportion of pores is pronouncedly reduced when using a Pb(Zr0.52Ti0.48)O-3 thin layer (<0.3 mum) prepared by metal-organic decomposition process as buffer layer. The PNN-PZT films transferred to silicon substrates by laser lift-off processes exhibit large electrical polarization characteristics (Pr = 41.9 muC/cm(2)), with small coercive field (Ec 35.6 kV/cm). (C) 2003 Elsevier Ltd. All rights reserved.