Bismuth nano-Hall probes fabricated by focused ion beam milling for direct magnetic imaging by room temperature scanning Hall probe microscopy

被引：22

作者：

Sandhu, A

Masuda, H

Kurosawa, K

Oral, A

Bending, SJ

机构：

[1] Tokai Univ, Dept Elect Engn & Elect, Hiratsuka, Kanagawa 2591292, Japan

[2] Toei Kogyo Ltd, Machida, Tokyo 1940035, Japan

[3] Hitachi Sci Syst Ltd, Hitachi, Ibaraki 3128504, Japan

[4] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey

[5] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 22期

关键词：

D O I：

10.1049/el:20010908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bismuth nano-Hall probes with dimensions similar to 120 x 120 nm were fabricated by focused ion beam milling and used for the direct room temperature magnetic imaging of crystalline garnet thin films and strontium ferrite permanent magnets by scanning Hall probe microscopy. At driving currents of 40 muA, the Hall coefficient and magnetic field sensitivity of the Bi nano-Hall probes were 3.3 x 10(-4) CYG and 7.2 G/root Hz, respectively.

引用

页码：1335 / 1336

页数：2

共 6 条

[1]

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