Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays

被引：26

作者：

Garguilo, JM ^{[1
]}

Koeck, FAM

Nemanich, RJ

Xiao, XC

Carlisle, JA

Auciello, O

机构：

[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.72.165404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermionic field emission properties of nitrogen doped ultrananocrystalline diamond (UNCD) coated silicon tip arrays are examined using thermionic field emission electron microscopy (TFEEM). Nitrogen doping has been shown to enhance the emission properties of diamond by the introduction of a donor level 1.7 eV below the conduction band minimum. The field enhancing geometry of the films initiates accelerated electron emission at the tipped structures which may be beneficial to thermionic energy converter design where space charge effects can significantly limit attainable current densities. Two temperature regimes of electron emission are observed; 600-800 degrees C, where the emission is enabled because of the H passivation and 900-1100 degrees C, where the emission is attributed to tunneling from nitrogen related states through the barrier of a clean diamond surface.

引用

页数：6

共 27 条

[1] Materials science and fabrication processes for a new MEMS technoloey based on ultrananocrystalline diamond thin films [J].

Auciello, O ;

Birrell, J ;

Carlisle, JA ;

Gerbi, JE ;

Xiao, XC ;

Peng, B ;

Espinosa, HD .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (16) :R539-R552

[2] PHOTOELECTRIC-EMISSION FROM NEGATIVE-ELECTRON-AFFINITY DIAMOND(111) SURFACES - EXCITON BREAKUP VERSUS CONDUCTION-BAND EMISSION [J].

BANDIS, C ;

PATE, BB .

PHYSICAL REVIEW B, 1995, 52 (16) :12056-12071

[3] Surface cleaning, electronic states and electron affinity of diamond (100), (111) and (110) surfaces [J].

Baumann, PK ;

Nemanich, RJ .

SURFACE SCIENCE, 1998, 409 (02) :320-335

[4] ACTIVATION ENERGY FOR THE SURFACE MIGRATION OF TUNGSTEN IN THE PRESENCE OF A HIGH-ELECTRIC FIELD [J].

BETTLER, PC ;

CHARBONNIER, FM .

PHYSICAL REVIEW, 1960, 119 (01) :85-93

[5] FIELD-EMISSION ELECTRON-SPECTROSCOPY OF SINGLE-ATOM TIPS [J].

BINH, VT ;

PURCELL, ST ;

GARCIA, N ;

DOGLIONI, J .

PHYSICAL REVIEW LETTERS, 1992, 69 (17) :2527-2530

[6] ON THE ELECTRON AND METALLIC ION EMISSION FROM NANOTIPS FABRICATED BY FIELD-SURFACE-MELTING TECHNIQUE - EXPERIMENTS ON W AND AU TIPS [J].

BINH, VT ;

GARCIA, N .

ULTRAMICROSCOPY, 1992, 42 :80-90

[7] Interpretation of the Raman spectra of ultrananocrystalline diamond [J].

Birrell, J ;

Gerbi, JE ;

Auciello, O ;

Gibson, JM ;

Johnson, J ;

Carlisle, JA .

[8] Bonding structure in nitrogen doped ultrananocrystalline diamond [J].

Birrell, J ;

Gerbi, JE ;

Auciello, O ;

Gibson, JM ;

Gruen, DM ;

Carlisle, JA .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5606-5612

[9] TEMPERATURE-DEPENDENCE OF IV CHARACTERISTICS OF VACUUM TRIODES FROM 24 TO 300-K [J].

BUSTA, HH ;

ZIMMERMAN, BJ ;

POGEMILLER, JE ;

TRINGIDES, MC ;

SPINDT, CA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :400-402

[10] Electron affinity of the bare and hydrogen covered single crystal diamond (111) surface [J].

Cui, JB ;

Ristein, J ;

Ley, L .

PHYSICAL REVIEW LETTERS, 1998, 81 (02) :429-432

← 1 2 3 →