Recent advances in the theory of oxide-semiconductor interfaces

被引：9

作者：

Edwards, AH

Fowler, WB

机构：

[1] USAF, Res Lab Space Vehicles, Kirkland AFB, NM 87108 USA

[2] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[3] Lehigh Univ, Sherman Fairchild Lab, Bethlehem, PA 18015 USA

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 01期

关键词：

D O I：

10.1016/S0026-2714(98)00205-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a review of recent results of atomic scale modeling of the silicon-oxide interface, including near-interface dielectric properties. The results are segregated into static properties, including such diverse cases as geometric conformation and XPS spectra of the interface and hyperfine interactions at point defects, and dynamic processes, including recent oxidation studies. In each case, we compare the theory with available experiment. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：3 / 14

页数：12

共 61 条

[1] EVALUATION OF SIO2/(001)SI INTERFACE ROUGHNESS USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY AND SIMULATION [J].