High-k gate dielectrics with ultra-low leakage current based on praseodymium oxide

被引：120

作者：

Osten, HJ ^{[1
]}

Liu, JP ^{[1
]}

Gaworzewski, P ^{[1
]}

Bugiel, E ^{[1
]}

Zaumseil, P ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We show that crystalline praseodymium oxide films of the Pr2O3-type grown on Si(100) have outstanding dielectric properties, displaying a dielectric constant of 31 independent of substrate doping, ultra-low leakage current density of 5x10(-9) A/cm(2) at V-g = +/- 1.0 V @ EOT = 14 Angstrom, good reliability, and reversible electrical breakdown. Thin Pr2O3 layers survive anneals of up to 1000 degreesC for 15 seconds with no degradation in electrical properties.

引用

页码：653 / 656

页数：4