Ultrafast all-optical switching at 1.3 μm/1.55 μm using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions

被引：3

作者：

Yoshida, H ^{[1
]}

Mozume, T ^{[1
]}

Neogi, A ^{[1
]}

Wada, O ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 3002635, Japan

来源：

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICIPRM.1998.712448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Coupled double quantum well (C-DQW) structure enabling ultrafast, multi-wavelength, all-optical modulation using intersubband transitions is proposed. It has been shown from the calculation of absorption spectrum and relaxation characteristics that InCaAs/AlAsSb C-DQW structure is desirable for the application in all-optical switches for multi-wavelength operation at near-infrared wavelengths down to 1.3 mu m The capability of ultrafast all-optical switching/wavelength conversion between 1.3 mu m and 1.55 mu m has also been shown.

引用

页码：247 / 249

页数：3