Computation of static shapes and voltages for micromachined deformable mirrors with nonlinear electrostatic actuators

被引:28
作者
Wang, PKC [1 ]
Hadaegh, FY [1 ]
机构
[1] CALTECH, JET PROP LAB, PASADENA, CA 91109 USA
基金
美国国家科学基金会;
关键词
D O I
10.1109/84.536627
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In modeling micromachined deformable mirrors with electrostatic actuators whose gap spacings are of the same order of magnitude as those of the surface deformations, it is necessary to use nonlinear models for the actuators. In this paper, we consider micromachined deformable mirrors modeled by a membrane or plate equation with nonlinear electrostatic actuator characteristics. Numerical methods for computing the mirror deformation due to given actuator voltages and the actuator voltages required for producing the desired deformations at the actuator locations are presented. The application of the proposed methods to circular deformable mirrors whose surfaces are modeled by elastic membranes is discussed in detail. Numerical results are obtained for a typical circular micromachined mirror with electrostatic actuators.
引用
收藏
页码:205 / 220
页数:16
相关论文
共 25 条
[1]  
AGRONIN ML, 1993, JPL PUBLICATION, V938, P225
[2]  
[Anonymous], 1965, INTRO LINEAR NONLINE
[3]  
Born M., 1986, PRINCIPLES OPTICS
[4]  
Cai X., 1993, P 1993 INT C COMPUTE, P283, DOI [10.1109/ICCAD.1993.580070, DOI 10.1109/ICCAD.1993.580070]
[5]   CONFIGURING AN ELECTROSTATIC MEMBRANE MIRROR BY LEAST-SQUARES FITTING WITH ANALYTICALLY DERIVED INFLUENCE FUNCTIONS [J].
CLAFLIN, ES ;
BAREKET, N .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1986, 3 (11) :1833-1839
[6]  
EALEY MA, 1989, P SOC PHOTO-OPT INS, V1167, P85
[7]   CONTINUOUS FACESHEET LOW-VOLTAGE DEFORMABLE MIRRORS [J].
EALEY, MA ;
WASHEBA, JF .
OPTICAL ENGINEERING, 1990, 29 (10) :1191-1198
[8]  
EALEY MA, 1990, CRIT REV OP, V1271, P254, DOI 10.1117/12.20412
[9]  
EALEY MA, 1991, P SOC PHOTO-OPT INS, V1271, P2
[10]  
GILBERT JR, 1995, MICRO ELECTRO MECHANICAL SYSTEMS - IEEE PROCEEDINGS, 1995, P122, DOI 10.1109/MEMSYS.1995.472542