Growth and characterization of Ce-doped LiCaAlF6 single crystals

被引：68

作者：

Shimamura, K ^{[1
]}

Mujilatu, N

Nakano, K

Baldochi, SL

Liu, ZL

Ohtake, K

Sarukura, N

Fukuda, T

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Inst Mol Sci, Okazaki, Aichi 4448585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 04期

关键词：

LiCaAlF6; crystal growth; inclusion; distribution coefficient; UV laser;

D O I：

10.1016/S0022-0248(98)00974-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Ce-doped LiCaAlF6 (Ce:LiCAF) single crystals with high transparency were grown by the Czochralski technique from the stoichiometric composition. A foreign material adhering to the surface of the crystals was investigated. The distribution coefficient of Ce3 + was determined to be 0.01. Ultraviolet pulse generation with output energy 30.5 mJ and slope efficiency 39% was obtained from a Ce:LiCAF laser. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：896 / 900

页数：5

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