Influence of process parameters on CNx films obtained by laser-CVD at two wavelengths

被引：7

作者：

Cireasa, R

Crunteanu, A

Alexandrescu, R

Morjan, I

Martin, C

Mihailescu, IN

Oncioiu, G

机构：

[1] Natl Inst Lasers Plasma & Radiat Phys, Lasers Dept, Bucharest, Romania

[2] Inst Nucl Res, Pitesti, Romania

来源：

CARBON | 1998年 / 36卷 / 5-6期

关键词：

photoelectron spectroscopy;

D O I：

10.1016/S0008-6223(98)00020-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The carbon nitride (CN,) films have been prepared by infrared (IR, at 10.6 mu m) and ultraviolet (at 248 nm) laser induced chemical vapour deposition (CVD) using different ethylene/nitrous oxide/ammonia mixtures. The partial concentration of ammonia in mixtures was varied in order to obtain a higher nitrogen incorporation in the deposited films. The changes induced in the gas-phase composition by the laser radiation in different experimental conditions were determined by IR transmission measurements. The film composition was studied by X-ray photoelectron spectroscopy. The modification of the film chemical composition, specifically the dependence of the N/C ratio, on the irradiation wavelength and on the reactants composition is described for the first time. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：775 / 780

页数：6

共 14 条

[1] CNx thin films obtained by laser induced CVD in different gas-substrate systems [J].