Silicon nitride as an effective protection against oxidation of a TiNi thin film in high temperature oxidizing air environment at atmospheric pressure

被引:4
作者
Roch, I [1 ]
Buchaillot, L [1 ]
Wallart, X [1 ]
Collard, D [1 ]
机构
[1] Inst Elect & Microelect Nord, UMR CNRS 8520, F-59652 Villeneuve Dascq, France
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 01期
关键词
D O I
10.1116/1.1338552
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The contamination of TiNi thin film by oxygen during the heat process was prevented by using the plasma enhanced chemical vapour deposited (PECVD) Si3N4. Silicon nitride did not effected the composition of TiNi thin film. Local oxidation resulting from the diffusion of oxygen through Ti and Cr adhesion coatings was not critical.
引用
收藏
页码:305 / 307
页数:3
相关论文
共 12 条
[1]   Oxidation behavior of equiatomic TiNi alloy in high temperature air environment [J].
Chu, CL ;
Wu, SK ;
Yen, YC .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1996, 216 (1-2) :193-200
[2]  
Ikuta K., 1994, IEEE MICRO ELEC MECH, P355
[3]  
JARDINE AP, 1990, MATER RES SOC SYMP P, V187, P181, DOI 10.1557/PROC-187-181
[4]   Vacuum-deposited TiNi shape memory film. Characterization and applications in microdevices [J].
Johnson, A.David .
Journal of Micromechanics and Microengineering, 1991, 1 (01) :34-41
[5]   A new fabrication process for Ni-Ti shape memory thin films [J].
Lehnert, T ;
Tixier, S ;
Böni, B ;
Gotthardt, R .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1999, 273 :713-716
[6]  
MIYAZAKI S, 1995, P SOC PHOTO-OPT INS, V2441, P156, DOI 10.1117/12.209795
[7]  
MIYAZAKI S, 1992, MEAS CONTR ROB P, P495
[8]  
QUANDT E, 1995, INT C SOL STAT SENS, P202
[9]  
ROCH I, IN PRESS SHAP MEM SU
[10]   Low temperature crystallised Ti-rich NiTi shape memory alloy films for microactuators [J].
Seguin, JL ;
Bendahan, M ;
Isalgue, A ;
Esteve-Cano, V ;
Carchano, H ;
Torra, V .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 74 (1-3) :65-69