Avalanche photodiode-based active pixel imager

被引：4

作者：

Marshall, GF ^{[1
]}

Jackson, JC

Denton, J

Hurley, PK

Braddell, O

Mathewson, A

机构：

[1] QinetiQ, Malvern, Worcs, England

[2] Photon Detect Syst Ltd, Dublin, Ireland

[3] Natl Microelect Res Ctr, Cork, Ireland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 03期

关键词：

avalanche photodiodes; (APDs); photodiodes; smart pixels; image sensors; subtwilight imaging;

D O I：

10.1109/TED.2003.823051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, an integrated avalanche photodiode-active pixel sensor (APD-APS) for "daylight to subtwilight" imaging has been demonstrated. Excellent logarithmic response of the APS was demonstrated by images taken with a 64 x 64 pixel array. Image degradation occurred when the APD was operated in sub-Geiger avalanche mode. Analysis of the APD current revealed that leakage from parasitic diodes obscured the internal avalanche gain. The parasitics will be shown to impede fabricating of useful APD-APS circuits and advanced isolation techniques must be employed to operate in avalanche mode.

引用

页码：509 / 511

页数：3

共 11 条

[1] Avalanche photodiode image sensor in standard BiCMOS technology [J].