High-power extreme ultraviolet source based on gas jets

被引：53

作者：

Kubiak, GD ^{[1
]}

Bernardez, LJ ^{[1
]}

Krenz, K ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94550 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES II | 1998年 / 3331卷

关键词：

D O I：

10.1117/12.309560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the development of a high-power laser plasma extreme ultraviolet (EUV) source for Extreme Ultraviolet Lithography. The source is based on the plasma emission of a recycled jet beam of large Xe clusters and produces no particulate debris. The source will be driven by a pulsed laser delivering 1500 W of focused average power to the cluster jet target. To develop condensers and to optimize source performance, a low-power laboratory cluster jet prototype has been used to study the spectroscopy, angular distributions, and EUV source images of the cluster jet plasma emission. In addition, methods to improve the reflectance lifetimes of nearby plasma-racing condenser mirrors have been developed. The resulting source yields EUV conversion efficiencies up to 3.8% and mirror lifetimes of similar to 10(9) plasma pulses, with further improvement anticipated.

引用

页码：81 / 89

页数：9