Formation of pn junctions by bonding of GaAs layer onto diamond

被引：13

作者：

Sugino, T

Itagaki, T

Shirafuji, J

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565

来源：

关键词：

direct bonding; pn junction; p-diamond-n-GaAs junction; photovoltaic effect;

D O I：

10.1016/0925-9635(95)00371-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Direct bonding of an n-GaAs thin film onto the surface of epitaxial p-diamond has been attempted. Prior to bonding, the diamond and GaAs surfaces were analyzed by X-ray photoelectron spectroscopy. A rectifying characteristic was obtained for the p-diamond/n-GaAs bonded junction system. Moreover, the occurrence of a photovoltaic effect at the junction was observed under illumination with a AlGaAs laser operated at 789 nm. Thus a Diamond-GaAs pn junction can be formed by direct bonding.

引用

页码：714 / 717

页数：4

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