On the "asymmetrical" behavior of transient enhanced diffusion in pre-amorphised Si wafers

被引：8

作者：

Alquier, D ^{[1
]}

Cowern, NEB ^{[1
]}

Pichler, P ^{[1
]}

Armand, C ^{[1
]}

Martinez, A ^{[1
]}

Mathiot, D ^{[1
]}

Omri, M ^{[1
]}

Claverie, A ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

来源：

SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING | 1998年 / 532卷

关键词：

D O I：

10.1557/PROC-532-67

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied by SIMS the diffusion of boron in Ge-preamorphised silicon over a range of anneal temperatures and times, focusing on the influence of the depth of the boron profile relative to the crystalline-amorphous (c/a) interface. It is shown that, for all durations, transient enhanced diffusion (TED) occurs on both sides of the c/a interface. For short annealing times, the amplitude of TED varies by about two orders of magnitude between the surface and the end-of-range (EOR) defect band, formed just below the original c/a interface. We propose a model in which TED arises from the coupling between Si-interstitial supersaturated "box", the EOR defect region, whose supersaturation decreases with time as the EOR defects grow, and a surface whose recombination efficiency is close to that of a perfect sink. The model successfully describes the different behavior of deep and shallow boron profiles, without requiring the existence of a diffusion barrier.

引用

页码：67 / 72

页数：6