Electrical conductivity of plasma-deposited carbon-germanium amorphous semiconductors: correlation with nanostructure

被引：10

作者：

Kazimierski, P ^{[1
]}

机构：

[1] Tech Univ Lodz, Fac Proc & Environm Engn, PL-90924 Lodz, Poland

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2003年 / 325卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(03)00336-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Investigations of electrical conductivity of plasma-deposited carbon-germanium amorphous semiconductors in the wide range of temperature and frequency have been carried out. It has been found that the electrical conductivity dependence on temperature and frequency fits a model, which is common for percolation transport in heterogeneous systems. The direct correlation between obtained results and material nanostructure, which consists of nanometer-size germanium clusters organized in larger domains, has been proved. Two hopping mechanisms related to jumps between neighboring cluster and neighboring domains as well as charge transport inside germanium clusters have been identified. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：206 / 212

页数：7

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