Orientation dependent microwave dielectric properties of ferroelectric Ba1-xSrxTiO3 thin films

被引：103

作者：

Moon, SE ^{[1
]}

Kim, EK

Kwak, MH

Ryu, HC

Kim, YT

Kang, KY

Lee, SJ

Kim, WJ

机构：

[1] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

[2] Changwon Natl Univ, Dept Phys, Chang Won 641773, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.1609658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of anisotropic dielectric properties of ferroelectric Ba1-xSrxTiO3 (BST) films on the characteristics of the interdigital (IDT) capacitors have been studied in microwave regions at room temperature. Ferroelectric BST films with (001), (011), and (111) orientation were epitaxially grown on (001), (011), and (111) MgO substrates, respectively, by the pulsed laser deposition method. The microwave properties of orientation engineered BST films were investigated using interdigital capacitors. The calculated dielectric constant tunability with 40 V dc bias variation and the calculated dielectric quality factor values for IDT capacitors based on (001), (011), and (111) oriented BST films at 9 GHz with no dc bias were about 47%, 55%, 43%, and 12, 14, 21, respectively. (C) 2003 American Institute of Physics.

引用

页码：2166 / 2168

页数：3

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