Using single source precursors and spray chemical vapor deposition to grow thin-film CuIns2

被引：15

作者：

Harris, JD ^{[1
]}

Hehemann, DG ^{[1
]}

Cowen, JE ^{[1
]}

Hepp, AF ^{[1
]}

Raffaelle, RP ^{[1
]}

Hollingsworth, JA ^{[1
]}

机构：

[1] Kent State Univ, Kent, OH 44135 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915900

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films of CulnS(2) were deposited on fused silica, stainless steel, Kapton (TM) and polybenzobisoxazole using the single source organometallic precursor (PPh3)(2)Culn(SEt)(4), in conjunction with spray chemical vapor deposition. Films were deposited at temperatures ranging from 325 - 360 degreesC. As deposited, the films had a thickness on the order of 200 A. The grain structure of the films was found to vary with carrier gas flow rate and substrate temperature.

引用

页码：563 / 566

页数：4

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