Kinetics of the chemical bath deposition of ZnSe films

被引：23

作者：

Ganchev, M

Stratieva, N

Tzvetkova, E

Gadjov, I

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

[2] Chem Engn & Met Univ, Dept Electrochem, Sofia 1421, Bulgaria

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期

关键词：

D O I：

10.1023/A:1026154615666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of ZnSe were obtained by chemical bath deposition from a solution containing ZnCl2, hydrazine (NH2)(2)H2O, NH3, and Na2SSeO3. The influence of the concentration of the components and of the temperature on the growth rate was studied. A hypothesis for a ZnSe formation process is proposed. The technological parameters for the preparation of thin dense films of sphalerite structure with a high transparency in the solar spectrum region are defined. (C) 2003 Kluwer Academic Publishers.

引用

页码：847 / 848

页数：2

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