LOW-DIELECTRIC CONSTANT MATERIALS IV
|
1998年
/
511卷
关键词:
D O I:
10.1557/PROC-511-151
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this paper, we present some results of the newly developed on-wafer photothermal measurement. To study thermal anisotropy, the out-of-plane thermal diffusivity measured from this technique is compared with the in-plane thermal diffusivity by measured by ISTS [1]. In addition to the thermal properties, the agreement with mechanical [2] and optical properties are also shown. The significance of different thermal performance between low K dielectric medium materials and SiO2 suggests that greater attention should be paid to thermal properties for integrated devices with low K materials.