Investigation of machine compliance uniformity for nanoindentation screening of wafer-supported libraries

被引:12
作者
Warren, OL
Dwivedi, A
Wyrobek, TJ
Famodu, OO
Takeuchi, I
机构
[1] Hysitron Inc, Minneapolis, MN 55344 USA
[2] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.1906089
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The reliability of nanoindentation results can depend critically on an accurate assessment of the machine compliance term. The common practice is to determine the machine compliance from a small reference specimen, then apply its value to a much larger wafer-supported library. The present study investigates the validity of this approach by thoroughly testing bare 76.2 mm diameter, 410 mu m thick Si(100) wafers mounted on two vacuum chucks of different design. We find that the small-sample value of the machine compliance is adequate for the majority of the wafer, including areas directly over vacuum rings and a circular center port of ordinary dimensions. However, vacuum chucks with a tweezer slot should be avoided in combinatorial materials science applications. But even in the absence of a tweezer slot, it may be necessary to generate an accurate machine compliance map for the wafer perimeter if the thin-film library extends beyond the outermost vacuum ring to the wafer edge. The Young's modulus and the hardness of silicon are found to be 169 +/- 3 GPa and 12.2 +/- 0.2 GPa, respectively, over well-mounted regions of the wafer; both values are in good agreement with the literature. (c) 2005 American Institute of Physics.
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页数:6
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