Ultrafast heating and switching of a semiconductor optical amplifier using half-cycle terahertz pulses

被引：26

作者：

Hughes, S ^{[1
]}

Citrin, DS

机构：

[1] Washington State Univ, Dept Phys, Semicond Opt Theory Grp, Pullman, WA 99164 USA

[2] Washington State Univ, Mat Res Ctr, Pullman, WA 99164 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.58.R15969

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carrier heating of a semiconductor optical amplifier (SOA) using half-cycle terahertz pulses is investigated. For reasonable parameters, the electron-hole plasma temperature can be increased substantially. The subsequent change in the refractive index and gain profile of the SOA is predicted to be large enough to form the basis of a very efficient ultrahigh-speed optical switch. [S0163-1829(98)50248-2].

引用

页码：15969 / 15972

页数：4

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