Doping dependence of electronic charge transfer on Si(100)

The ion fractions of 4 keV Ne+ scattered from intrinsic and heavily n-doped and p-doped Si(1 0 0)-(2 x 1) surfaces have been measured using time-of-flight scattering and recoiling spectrometry. The ion fractions depend strongly on azimuthal angle, varying from 28-36% for n-doped and 36-44% for p-doped. The pronounced dependency on substrate doping is correlated with surface electronic structure and ion neutralization probability. The observed behavior can be explained by the difference in band bending on intrinsic and n- and p-doped semiconductor surfaces. (C) 2001 Elsevier Science B.V. All rights reserved.