Gallium nitride nanotubes by the conversion of gallium oxide nanotubes

被引:95
作者
Hu, JQ
Bando, Y
Golberg, D
Liu, QL
机构
[1] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
关键词
gallium; nanotechnology; nanotubes; nitrides;
D O I
10.1002/anie.200351001
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The future technology of blue lasers and optical communication, and is likely to be based on GaN. The creation of crystalline GaN nanotubes in bulk has been achieved by a two-stage process based on the well-controllable amorphous gallium oxide (Ga2O) nanotube conversion. The assynthesized GaN nanotubes have fairly uniform diameters of ≈80 nm, wall thicknesses of ≈20 nm, and lengths of up to several tens of micrometers.
引用
收藏
页码:3493 / 3497
页数:5
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