MEMS microswitches for reconfigurable microwave circuitry

被引：95

作者：

Duffy, S ^{[1
]}

Bozler, C ^{[1
]}

Rabe, S ^{[1
]}

Knecht, J ^{[1
]}

Travis, L ^{[1
]}

Wyatt, P ^{[1
]}

Keast, C ^{[1
]}

Gouker, M ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2001年 / 11卷 / 03期

关键词：

Capacitance - Electric impedance - Microwave circuits - Scanning electron microscopy - Switches;

D O I：

10.1109/7260.915617

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance is reported for a new microelectromechanical structure (MEMS) cantilever microswitch. We report on both dc- and capacitively-contacted microswitches, The de-contacted microswitches have contact resistance of less than 1 Omega, and the RF loss of the switch up to 40 GHz in the closed position is 0.1-0.2 dB, Capacitively-contacted switches have an impedance ratio of 141:1 from the open to closed state and in the closed position have a series capacitance of 1.2 pF, The capacitively-contacted switches have been measured up to 40 GHz with S-21 less than -0.7 dB across the 5-40 GHz band.

引用

页码：106 / 108

页数：3

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