Influence of line dimensions on the resistance of Cu interconnections

被引：81

作者：

Chen, F ^{[1
]}

Gardner, D

机构：

[1] IBM Corp, Microelect, Essex Junction, VT 05452 USA

[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

[3] Intel Corp, Component Res, Santa Clara, CA 95052 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 12期

关键词：

D O I：

10.1109/55.735762

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As dimensions reach the deep-submicrometer level on the order of the mean-free path of electrons, increases in the resistivity of a metal corresponding to reductions of wire dimensions is a concern. To understand the resistance dependence on the dimensions, resistance of Cu versus interconnection size was analyzed. The experimental values were in good agreement with Fuchs' size-effect theory. The resistance of Cu increased nonlinearly as line width decreased. This enhancement was attributed to the increased surface and grain boundary scattering. Almost 50% of the electrons elastically scatter during transport in wires with widths below 0.5 mu m. It will be important in the future to develop interconnections with smooth surfaces on all sides to maximize elastic scattering of electrons.

引用

页码：508 / 510

页数：3