Effect of disorder on the ground-state properties of graphene

被引：19

作者：

Asgari, R. ^{[1
]}

Vazifeh, M. M. ^{[2
]}

Ramezanali, M. R. ^{[2
]}

Davoudi, E. ^{[3
]}

Tanatar, B. ^{[4
]}

机构：

[1] Sch Phys, Inst Studies Theoret Phys & Math, Tehran 193955531, Iran

[2] Sharif Univ Technol, Dept Phys, Tehran 111559161, Iran

[3] Islamic Azad Univ, Dept Phys, Tehran 1416894351, Iran

[4] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.77.125432

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the ground-state energy of Dirac electrons in graphene in the presence of disorder. We take randomly distributed charged impurities at a fixed distance from the graphene sheet and surface fluctuations (ripples) as the main scattering mechanisms. A mode-coupling approach to the scattering rate and random-phase approximation for the ground-state energy incorporating the many-body interactions and the disorder effects yields good agreement with the experimental inverse compressibility.

引用

页数：6

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