Suns-photoluminescence: Contactless determination of current-voltage characteristics of silicon wafers

被引：80

作者：

Trupke, T ^{[1
]}

Bardos, RA ^{[1
]}

Abbott, MD ^{[1
]}

Cotter, JE ^{[1
]}

机构：

[1] Univ New S Wales, Ctr Excellence Adv Silicon Photovoltaics & Photon, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 09期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2034109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In good silicon solar cells, the separation of the quasi-Fermi energies Delta eta in the bulk is equivalent to the cell voltage. Photoluminescence is used to measure Delta eta in both bifacial solar cells and partly processed solar cells. The bifacial cells are used to demonstrate that simultaneous measurement of the photoluminescence signal and of the variable incident light intensity yields pseudo current-voltage characteristics, equivalent to Suns-open circuit voltage (V-OC) measurements, but in contactless mode. The applicability of this method to unfinished solar cells, without the need for a solar cell structure, is demonstrated on silicon wafers after various processing steps. (c) 2005 American Institute of Physics.

引用

页数：3

共 20 条

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