Reversible and non-reversible photo-enhanced luminescence in CdSe/ZnS quantum dots

被引：51

作者：

Korsunska, NE

Dybiec, M

Zhukov, L

Ostapenko, S

Zhukov, T

机构：

[1] Inst Semicond Phys, Kiev, Ukraine

[2] Univ S Florida, Tampa, FL USA

[3] Univ S Florida, H Lee Moffitt Canc Ctr, Tampa, FL 33682 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期

关键词：

D O I：

10.1088/0268-1242/20/8/044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on optical enhancement of the 655 nm photoluminescence (PL) band intensity in the core-shell CdSe/ZnS nano-particles (quantum dots) under a laser illumination. Kinetic curves and 80 K-to-room temperature dependences of the PL intensity reveal two parallel processes: a reversible enhancement when the PL intensity is recovered after the laser illumination is turned off, and a non-reversible permanent increase of the PL output. Experimental data evidence that the PL enhancement is attributed to the light-activated increase of the energy barrier for photo-generated carriers to escape quantum dot levels. A trap recharging and/or photo-chemical bond restructure play a possible role in the luminescence photo-enhancement.

引用

页码：876 / 881

页数：6

共 16 条

[1] Semiconductor nanocrystals as fluorescent biological labels [J].