Control and detection of organosilane polarization on nanowire field-effect transistors

被引：54

作者：

Lin, M. C. ^{[1
,2
]}

Chu, C. J. ^{[1
,3
]}

Tsai, L. C. ^{[3
]}

Lin, H. Y. ^{[4
]}

Wu, C. S. ^{[1
,5
]}

Wu, Y. P. ^{[1
]}

Wu, Y. N. ^{[1
,6
]}

Shieh, D. B. ^{[6
]}

Su, Y. W. ^{[1
,7
]}

Chen, C. D. ^{[1
,8
]}

机构：

[1] Acad Sinica, Inst Phys, Taipei 11529, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ Technol, Dept Mol Sci & Engn, Taipei 70608, Taiwan

[4] Natl Univ Tainan, Dept Mat Sci, Tainan 70005, Taiwan

[5] Natl Chang Hua Univ Educ, Dept Phys, Changhua 500, Taiwan

[6] Natl Cheng Kung Univ, Inst Mol Med, Inst Oral Med, Tainan 701, Taiwan

[7] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan

[8] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

来源：

NANO LETTERS | 2007年 / 7卷 / 12期

关键词：

D O I：

10.1021/nl0719170

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrated control and detection of UV-induced 3-aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.

引用

页码：3656 / 3661

页数：6

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